Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method
نویسندگان
چکیده
Single wall carbon nanotubes (SWNTs) suspended in isopropyl alcohol have been placed between two electrodes by AC dielectrophoresis method. The number of SWNTs bridging the two electrodes is controlled by SWNT concentration of the suspension and deposition time. Through selectively burning off the metallic SWNTs by current induced oxidation, the back-gate carbon nanotube field effect transistors (CNTFETs) with a channel current on–off ratio of up to 7· 10 have been successfully fabricated. The success rate of the CNTFETs in 20 samples is 60%. These results suggest that AC dielectrophoresis placement method is an efficient technique to fabricate CNTFETs with some flexibilities of controlling CNT reconnection, length and orientation. 2004 Elsevier Ltd. All rights reserved.
منابع مشابه
Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis
Single-walled carbon nanotube field effect transistors (SWNT-FETs) are fabricated by two different alignment techniques. The first technique is based on direct synthesis of an aligned SWNTs array on quartz wafer using chemical vapor deposition. The transistor with three SWNTs and atomic layer deposited (ALD) Al2O3 gate oxide shows a contact resistance of 280 KX, a maximum on-current of 7 lA, an...
متن کاملFloating-potential dielectrophoresis-controlled fabrication of single-carbon-nanotube transistors and their electrical properties.
We present a floating-potential dielectrophoresis method used for the first time to achieve controlled alignment of an individual semiconducting or metallic single-walled carbon nanotube (SWCNT) between two electrical contacts with high repeatability. This result is significantly different from previous reports, in which bundles of SWCNTs were aligned between electrode arrays by a conventional ...
متن کاملHigh yield assembly and electron transport investigation of semiconducting-rich local-gated single-walled carbon nanotube field effect transistors.
We report the fabrication and electron transport investigation of individual local-gated single-walled carbon nanotube field effect transistors (SWNT-FET) with high yield using a semiconducting-rich carbon nanotube solution. The individual semiconducting nanotubes were assembled at the selected position of the circuit via dielectrophoresis. Detailed electron transport investigations on 70 devic...
متن کاملFabrication of SWCNT-Graphene Field-Effect Transistors
Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO2 as...
متن کاملBallistic (n,0) Carbon Nanotube Field Effect Transistors' I-V Characteristics: A Comparison of n=3a+1 and n=3a+2
Due to emergence of serious obstacles by scaling of the transistors dimensions, it has been obviously proved that silicon technology should be replaced by a new one having a high ability to overcome the barriers of scaling to nanometer regime. Among various candidates, carbon nanotube (CNT) field effect transistors are introduced as the most promising devices for substituting the silicon-based ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2015